Electrical equivalent circuit large-signal thermal modelling for GaAs III-V devices

This paper deals with FET's thermal static and dynamic properties for large signal operation. A very simple correction for traditional empirical equations for the Ids current source is proposed. The resulting mathematical approach takes into account the most important characteristics of these devices such as Power efficiency, Low frequency dispersion, Self heating and External temperature dependence. The experimental measurements and electrical modeling approaches has been done for three European foundries using very different topologies and technological process.