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Highly Efficient Metal-Free Growth of Nitrogen-Doped Single-Walled Carbon Nanotubes on Plasma-Etched Substrates for Oxygen Reduction
- Source :
- Journal of the American Chemical Society. 132:15127-15129
- Publication Year :
- 2010
- Publisher :
- American Chemical Society (ACS), 2010.
-
Abstract
- We have for the first time developed a simple plasma-etching technology to effectively generate metal-free particle catalysts for efficient metal-free growth of undoped and/or nitrogen-doped single-walled carbon nanotubes (CNTs). Compared with undoped CNTs, the newly produced metal-free nitrogen-containing CNTs were demonstrated to show relatively good electrocatalytic activity and long-term stability toward oxygen reduction reaction (ORR) in an acidic medium. Owing to the highly generic nature of the plasma etching technique, the methodology developed in this study can be applied to many other substrates for efficient growth of metal-free CNTs for various applications, ranging from energy related to electronic and to biomedical systems.
- Subjects :
- Silicon
Nitrogen
Silicon dioxide
chemistry.chemical_element
Nanotechnology
Carbon nanotube
Microscopy, Atomic Force
Electrochemistry
Biochemistry
Oxygen
Catalysis
law.invention
chemistry.chemical_compound
Colloid and Surface Chemistry
law
Plasma etching
Nanotubes, Carbon
Water
General Chemistry
Silicon Dioxide
chemistry
Particle
Oxidation-Reduction
Subjects
Details
- ISSN :
- 15205126 and 00027863
- Volume :
- 132
- Database :
- OpenAIRE
- Journal :
- Journal of the American Chemical Society
- Accession number :
- edsair.doi.dedup.....0ca03a9e02e25838318c608517d6590e