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Quick determination of copper-metallization long-term impact on silicon solar cells
- Publication Year :
- 2010
-
Abstract
- In this paper, we present a method to quickly evaluate the long-term effects of copper-containing metal stack systems for silicon solar cell front–side metallization. Copper diffusion, which is detrimental for the solar cell performance, is accelerated by exposing the cell to thermal stress. In this paper, we suggest to quantify the degree of copper diffusion into the cell by the very fast Suns-VOC technique, measuring the pseudo fill factor pFF. Using three or more different temperatures, and assuming a certain loss in pFF corresponds to a certain depth of diffusion, the effective activation energy for copper diffusion for a given system can be extracted from an Arrhenius plot of the measured data. An extrapolation into temperature regions typical for solar cell modules under outdoor conditions allows an estimation of the fill factor loss for any operation time and temperature. Compared to time- and cost-intensive methods such as transmission electron microscopy or secondary-ion mass spectrometry, this kind of investigation requires only sparse equipment and can typically be done in 1 week per stack system. © 2010 The Electrochemical Society. DOI: 10.1149/1.3466984 All rights reserved.
- Subjects :
- Materials science
Silicon
Analytical chemistry
chemistry.chemical_element
Activation energy
law.invention
Stack (abstract data type)
law
Solar cell
Materials Chemistry
Electrochemistry
Charakterisierung
Diffusion (business)
Kontaktierung und Strukturierung
Solarzellen - Entwicklung und Charakterisierung
Renewable Energy, Sustainability and the Environment
business.industry
Condensed Matter Physics
Copper
Arrhenius plot
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Silicium-Photovoltaik
Solar cell efficiency
chemistry
Optoelectronics
Industrielle und neuartige Solarzellenstrukturen
business
Zellen und Module
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....0c598d9a39383aae702360df7bbaea5c