The role of p-doping in the gain dynamics of InAs/GaAs quantum dots at low temperature

The role of p-type doping on the carrier dynamics of epitaxially grown InAs/GaAs quantum dots QDs has been discussed intensively in recent literature. Via the incorporation of p-doping, QDs are positively charged by a built-in hole reservoir. These systems are not only of fundamental interest to study, e.g., carrier spin dynamics, but also received increasing attention for their application in optoelectronic devices with improved performances. InAs/GaAs QD lasers incorporating p-doping were shown to exhibit temperature insensitive threshold current 1 and linewidth enhancement factor, 2 high peak modal gain, 3 and high modulation bandwidth. 4