Back to Search
Start Over
Versatile Post-Doping toward Two-Dimensional Semiconductors
- Source :
- ACS Nano. 15:19225-19232
- Publication Year :
- 2021
- Publisher :
- American Chemical Society (ACS), 2021.
-
Abstract
- We have developed a simple and straightforward way to realize controlled postdoping toward 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic-energy dopant beams and a high-flux chalcogen beam simultaneously, leading to substitutional doping with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. The electronic properties of doped TMDs (Nb-doped WSe2) have shown drastic change and p-type action with more than 2 orders of magnitude increase in current. Position-selective doping has also been demonstrated by the postdoping toward TMDs with a patterned mask on the surface. The postdoping method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.
Details
- ISSN :
- 1936086X and 19360851
- Volume :
- 15
- Database :
- OpenAIRE
- Journal :
- ACS Nano
- Accession number :
- edsair.doi.dedup.....0c1c909f941d5fc2b2c35c74b10f3bc6