Tunable Stokes Shift in Uniaxially Stressed Silicon with Shallow Donors

Experimental investigations of THz emission from silicon (Si) doped by shallow donors under uniaxial stress along the [001] crystal axis upon selective intracenter excitation by an infrared free electron laser are presented. spectral dependences of Si output integral emission on the pump wavelength and Si laser output terahertz emission spectra have been analyzed. Two mechanisms of stimulated emission have been recognized as inversion-population-based lasing and stimulated Raman scattering. It is shown that uniaxial stress allows to control the Stokes shift and by this the output Raman emission frequency in the active medium. The obtained results demonstrate the feasibility of broad range THz tuning in doped silicon by means of uniaxial stress.