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A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
- Source :
- Applied Physics Letters, ISSN 0003-6951, 2008-11, Vol. 93, No. 19, Physical Review Letters, ISSN 0031-9007, 2008-11, Vol. 93, No. 19, Archivo Digital UPM, Universidad Politécnica de Madrid
- Publication Year :
- 2008
- Publisher :
- E.T.S.I. Telecomunicación (UPM), 2008.
-
Abstract
- Indium incorporation and surface morphology of InAlN layers grown on (0001) GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450–610 °C range. In incorporation was found to decrease with substrate temperature due to thermal decomposition of the growing layer, while for a given temperature it increased with the impinging In flux until stoichiometry was reached at the growth front. The InN losses during growth followed an Arrhenius behavior characterized by an activation energy of 2.0 eV. A growth diagram highly instrumental to identify optimum growth conditions was established.
- Subjects :
- 010302 applied physics
Telecomunicaciones
Materials science
Materiales
Physics and Astronomy (miscellaneous)
Thermal decomposition
Inorganic chemistry
Analytical chemistry
chemistry.chemical_element
Crystal growth
02 engineering and technology
Substrate (electronics)
Activation energy
021001 nanoscience & nanotechnology
01 natural sciences
Ingeniería Civil y de la Construcción
chemistry
0103 physical sciences
Electrónica
0210 nano-technology
Layer (electronics)
Indium
Stoichiometry
Molecular beam epitaxy
Subjects
Details
- Language :
- Spanish; Castilian
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters, ISSN 0003-6951, 2008-11, Vol. 93, No. 19, Physical Review Letters, ISSN 0031-9007, 2008-11, Vol. 93, No. 19, Archivo Digital UPM, Universidad Politécnica de Madrid
- Accession number :
- edsair.doi.dedup.....0c0f4e8a0ab87ec1c54b5617841250d5