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A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy

Authors :
Ž. Gačević
E. Calleja
Sergio Fernández-Garrido
Source :
Applied Physics Letters, ISSN 0003-6951, 2008-11, Vol. 93, No. 19, Physical Review Letters, ISSN 0031-9007, 2008-11, Vol. 93, No. 19, Archivo Digital UPM, Universidad Politécnica de Madrid
Publication Year :
2008
Publisher :
E.T.S.I. Telecomunicación (UPM), 2008.

Abstract

Indium incorporation and surface morphology of InAlN layers grown on (0001) GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450–610 °C range. In incorporation was found to decrease with substrate temperature due to thermal decomposition of the growing layer, while for a given temperature it increased with the impinging In flux until stoichiometry was reached at the growth front. The InN losses during growth followed an Arrhenius behavior characterized by an activation energy of 2.0 eV. A growth diagram highly instrumental to identify optimum growth conditions was established.

Details

Language :
Spanish; Castilian
Database :
OpenAIRE
Journal :
Applied Physics Letters, ISSN 0003-6951, 2008-11, Vol. 93, No. 19, Physical Review Letters, ISSN 0031-9007, 2008-11, Vol. 93, No. 19, Archivo Digital UPM, Universidad Politécnica de Madrid
Accession number :
edsair.doi.dedup.....0c0f4e8a0ab87ec1c54b5617841250d5