Material proposal for 2D indium oxide

Realization of semiconductor materials at the two-dimensional (2D) limit can elicit exceptional and diversified performance exercising transformative influence on modern technology. We report experimental evidence for the formation of conceptually new 2D indium oxide (InO) and its material characteristics. The formation of 2D InO was harvested through targeted intercalation of indium (In) atoms and deposition kinetics at graphene/SiC interface using a robust metal organic chemical vapor deposition (MOCVD) process. A distinct structural configuration of two sub-layers of In atoms in "atop" positions was imaged by scanning transmission electron microscopy (STEM). The bonding of oxygen atoms to indium atoms was indicated using electron energy loss spectroscopy (EELS). A wide bandgap energy measuring a value of 4.1 eV was estimated by conductive atomic force microscopy measurements (C-AFM) for the 2D InO. Funding Agencies|FLAG-ERA 2015 JTC project GRIFONE through Swedish Research Council [VR 2015-06816]; National Research Development and Innovation Office, Hungary [NN 118914]; Italian Ministry of Education and Research (MIUR) under the project EleGaNTeMinistry of Education, Universities and Research (MIUR) [PON ARS01_01007]; European Structural and Investment Funds [VEKOP-2.3.3-15-2016-00002]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [RIF 14-0074]; Knut and Alice Wallenbergs FoundationKnut & Alice Wallenberg Foundation; [VR 2017-04071]