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Distributed feedback gain-coupled lasers based on InGaAs quantum-wire arrays
- Source :
- IEEE Photonics Technology Letters. 9:5-7
- Publication Year :
- 1997
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1997.
-
Abstract
- Fabrication and characterization of a current-injected InGaAs-GaAs quantum-wire gain-coupled distributed feedback (DFB) laser operating at 77 K at a wavelength of 923 nm are presented. Threshold current densities in broad area lasers were measured to be as low as 160 A/cm/sup 2/. The side-mode suppression ratio at twice threshold is 35 dB. A 4-/spl mu/m rib waveguide device has a threshold of 14 mA. The patterning process for the second-order DFB grating fabricated with deep UV holography and wet-chemical etching is described.
- Subjects :
- Distributed feedback laser
Materials science
business.industry
Quantum wire
Holography
quantum wire
molecular beam epitaxial growth
Grating
Laser
SEMICONDUCTOR-LASERS
Waveguide (optics)
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Semiconductor laser theory
law.invention
distributed feddback laser
Optics
Etching (microfabrication)
law
DFB LASER
Optoelectronics
Electrical and Electronic Engineering
semiconductor laser
business
Subjects
Details
- ISSN :
- 19410174 and 10411135
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- IEEE Photonics Technology Letters
- Accession number :
- edsair.doi.dedup.....0a98880411776aac61c4fe4420444864
- Full Text :
- https://doi.org/10.1109/68.554152