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Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

Authors :
Jian-Wei Liang
Yuliar Firdaus
Chun Hong Kang
Jung-Wook Min
Jung-Hong Min
Redha H. Al Ibrahim
Nimer Wehbe
Mohamed Nejib Hedhili
Dimitrios Kaltsas
Leonidas Tsetseris
Sergei Lopatin
Shuiqin Zheng
Tien Khee Ng
Thomas D. Anthopoulos
Boon S. Ooi
Source :
ACS Applied Materials & Interfaces. 14:17889-17898
Publication Year :
2022
Publisher :
American Chemical Society (ACS), 2022.

Abstract

Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 10

Subjects

Subjects :
General Materials Science

Details

ISSN :
19448252 and 19448244
Volume :
14
Database :
OpenAIRE
Journal :
ACS Applied Materials & Interfaces
Accession number :
edsair.doi.dedup.....0a85688d94bc3a5e17374e072981ffdb