Back to Search
Start Over
Effects of interface morphology on Schottky-barrier heights: A case study on Al/GaAs(001)
- Source :
- Scopus-Elsevier
- Publication Year :
- 1997
-
Abstract
- The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any structural distortions on the metal side---including elongations of the metal-semiconductor bond (i.e. interface strain)---whereas it strongly depends on the interface structure on the semiconductor side. A rationale for these findings is given in terms of the interface dipole generated by the ionic effective charges.<br />5 pages, latex file, 2 postscript figures automatically included
- Subjects :
- Materials science
Morphology (linguistics)
Interface (Java)
Qualitative evidence
Schottky barrier
FOS: Physical sciences
Ionic bonding
Nanotechnology
DFT
Barriere Schottky
interfacce metallo/semiconduttore
struttura elettronica
Settore FIS/03 - Fisica della Materia
Metal
Condensed Matter::Materials Science
Condensed Matter - Materials Science
Condensed matter physics
business.industry
Materials Science (cond-mat.mtrl-sci)
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Dipole
Semiconductor
visual_art
visual_art.visual_art_medium
business
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Scopus-Elsevier
- Accession number :
- edsair.doi.dedup.....09ebaba6dda1c82c284236d28d64f492