A low-power high-performance digital predistorter for wideband power amplifiers

In this paper, we present a low-power high-performance digital predistorter (DPD) for the linearization of wideband RF power amplifiers (PAs). It is based on the novel FIR memory polynomial (FIR-MP) predistorter model, which significantly augments the performance of the conventional memory polynomial predistorter with the use of complex baseband digital FIR filter prior to the memory polynomial. The adjacent channel leakage ratio (ACLR) performance comparison between the conventional MP and the proposed FIR-MP is done based on simulations with multi-carrier modulated signals of 20 and 80 MHz bandwidths. The PA models used for the simulations are extracted from the measurements of a commercial $$1\,\hbox {W}$$ GaAs HBT PA. At the ideal system-level simulations, the improvements in ACLR over the conventional MP are 7.2 and 15.6 dB, respectively, for 20 and 80 MHz signals. The choice of selection of various parameters of the predistorter along with the subsequent digital-to-analog converter (DAC) is presented. The impact of fixed-point representation is assessed using ACLR metrics, which shows that a wordlength of 14 bits is sufficient to obtain ACLR beyond $$45\,\hbox {dBc}$$ with a margin of $$10\,\hbox {dB}$$ . The proposed predistorter is synthesized in $$28\,\hbox {nm}$$ fully-depleted silicon-on-insulator (FDSOI) CMOS process. It is shown that with a fraction of the power and die area of that of the MP a huge improvement in ACLR is attained. With an overall power consumption of 8.2 and 88.8 mW, respectively, for 20 and 80 MHz signals, the FIR-MP DPD proves to be a suitable candidate for small-cell base station PA linearization.