Magnetooptical study of Mn ions implanted in Ge

Summary form only given. The synthesis of optimal materials for spin dependent electronics is the challenging goal of recent studies. Magnetic multilayers are the most popular solution, but a promising alternative is constituted by magnetic semiconductors. One of these is Mn:Ge which shows ferromagnetic properties and magnetoresistance phenomena below room temperature, attributed to Mn/sub x/Ge/sub 1-x/ clusters. In the present work, we investigate the properties of samples obtained by implanting Mn/sup +/ ions on Ge(100) at energy of 100 keV, with a dose of 2 x 10/sup 16/ at./cm/sup 2/. The temperature of the substrate was 300/spl deg/C. We report the results obtained in the as-prepared material, in the material annealed for 1 hour at 400/spl deg/C, and 600/spl deg/C.