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Growth of straight, atomically perfect, highly metallic silicon nanowires with chiral asymmetry

Authors :
Bernard Aufray
C. Leandri
Bruno Olivieri
C. Quaresima
Guy Le Lay
Sébastien Vizzini
Paola De Padova
Paolo Perfetti
Centre de recherche de la matière condensée et des nanosciences (CRMCN)
Université de la Méditerranée - Aix-Marseille 2-Université Paul Cézanne - Aix-Marseille 3-Centre National de la Recherche Scientifique (CNRS)
Cinam, Hal
Source :
Nano Letters, Nano Letters, American Chemical Society, 2008, 8 (1), pp.271-275, Nano letters, 8 (2008): 271–275. doi:10.1021/n1072591y, info:cnr-pdr/source/autori:De Padova P.1; Quaresima C.1; Perfetti P.1; Olivieri B.2; Leandri C.3; Aufray B.3; Vizzini S.3; Le Lay G.3/titolo:Growth of straight, atomically perfect, highly metallic silicon nanowires with chiral asymmetry/doi:10.1021%2Fn1072591y/rivista:Nano letters (Print)/anno:2008/pagina_da:271/pagina_a:275/intervallo_pagine:271–275/volume:8, info:cnr-pdr/source/autori:Paola De Padova (1);† Claudio Quaresima (1);† Paolo Perfetti (1);† Bruno Olivieri (2); Christel Leandri (3); Bernard Aufray (3); Sebastien Vizzini (3); Guy Le Lay (3)‡/titolo:Growth of straight, atomically perfect, highly metallic silicon nanowires with chiral asymmetry/doi:10.1021%2Fn1072591y/rivista:Nano letters (Print)/anno:2008/pagina_da:271/pagina_a:275/intervallo_pagine:271–275/volume:8, Nano Letters, 2008, 8 (1), pp.271-275
Publication Year :
2008
Publisher :
HAL CCSD, 2008.

Abstract

In the quest of nano-objects for future electronics, silicon nanowires could possibly take over carbon nanotubes. Here we show the growth by self-organization of straight, massively parallel silicon nanowires having a width of 1.6 nm, which are atomically perfect and highly metallic conductors. Surprisingly, these silicon nanowires display a strong symmetry breaking across their widths with two chiral species that self-assemble in large left-handed and right-handed magnetic-like domains.

Details

Language :
English
ISSN :
15306984 and 15306992
Database :
OpenAIRE
Journal :
Nano Letters, Nano Letters, American Chemical Society, 2008, 8 (1), pp.271-275, Nano letters, 8 (2008): 271–275. doi:10.1021/n1072591y, info:cnr-pdr/source/autori:De Padova P.1; Quaresima C.1; Perfetti P.1; Olivieri B.2; Leandri C.3; Aufray B.3; Vizzini S.3; Le Lay G.3/titolo:Growth of straight, atomically perfect, highly metallic silicon nanowires with chiral asymmetry/doi:10.1021%2Fn1072591y/rivista:Nano letters (Print)/anno:2008/pagina_da:271/pagina_a:275/intervallo_pagine:271–275/volume:8, info:cnr-pdr/source/autori:Paola De Padova (1);† Claudio Quaresima (1);† Paolo Perfetti (1);† Bruno Olivieri (2); Christel Leandri (3); Bernard Aufray (3); Sebastien Vizzini (3); Guy Le Lay (3)‡/titolo:Growth of straight, atomically perfect, highly metallic silicon nanowires with chiral asymmetry/doi:10.1021%2Fn1072591y/rivista:Nano letters (Print)/anno:2008/pagina_da:271/pagina_a:275/intervallo_pagine:271–275/volume:8, Nano Letters, 2008, 8 (1), pp.271-275
Accession number :
edsair.doi.dedup.....07feb294dc5904173da241ad4734908d
Full Text :
https://doi.org/10.1021/n1072591y