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Raman scattering in ion-implanted GaN
- Source :
- Applied Physics Letters. 72:2589-2591
- Publication Year :
- 1998
- Publisher :
- AIP Publishing, 1998.
-
Abstract
- Raman measurements were performed on molecular beam epitaxially grown GaN before and after implantation with Ar+, Mg+, P+, C+, and Ca+ ions. With increasing ion dose, new Raman peaks arise at 300, 360, 420, and 670 cm−1, independent of the ion species. After rapid thermal annealing at temperatures between 900 and 1150 °C for 15 s, the intensities of the Raman modes decrease with increasing temperature with the exception of the 360 cm−1 mode which shows a maximum in intensity after annealing at 900 °C. The mode at 300 cm−1 is attributed to disorder-activated Raman scattering, whereas the other three modes are assigned to local vibrations of vacancy-related defects.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 72
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....074ad08e05fd42d273f09dce07eb567d