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NaSn2As2: An Exfoliatable Layered van der Waals Zintl Phase

Authors :
Jinsong Xu
Amanda Hanks
Søren Ulstrup
Roland J. Koch
Maxx Q. Arguilla
Wolfgang Windl
Eli Rotenberg
Chris Jozwiak
Roland Kawakami
Joshua E. Goldberger
Aaron Bostwick
Xiaoxiang Xi
Jie Shan
Jyoti Katoch
David W. McComb
Nicholas D. Cultrara
Shishi Jiang
Kevin Krymowski
Richard D. Ross
Source :
ACS Nano. 10:9500-9508
Publication Year :
2016
Publisher :
American Chemical Society (ACS), 2016.

Abstract

The discovery of new families of exfoliatable 2D crystals that have diverse sets of electronic, optical, and spin-orbit coupling properties, enables the realization of unique physical phenomena in these few-atom thick building blocks and in proximity to other materials. Herein, using NaSn2As2 as a model system, we demonstrate that layered Zintl phases having the stoichiometry ATt2Pn2 (A = Group 1 or 2 element, Tt = Group 14 tetrel element and Pn = Group 15 pnictogen element) and feature networks separated by van der Waals gaps can be readily exfoliated with both mechanical and liquid-phase methods. We identified the symmetries of the Raman active modes of the bulk crystals via polarized Raman spectroscopy. The bulk and mechanically exfoliated NaSn2As2 samples are resistant towards oxidation, with only the top surface oxidizing in ambient conditions over a couple of days, while the liquid-exfoliated samples oxidize much more quickly in ambient conditions. Employing angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT), and transport on bulk and exfoliated samples, we show that NaSn2As2 is a highly conducting 2D semimetal, with resistivities on the order of 10-6 {\Omega} m. Due to peculiarities in the band structure, the dominating p-type carriers at low temperature are nearly compensated by the opening of n-type conduction channels as temperature increases. This work further expands the family of exfoliatable 2D materials to layered van der Waals Zintl phases, opening up opportunities in electronics and spintronics.

Details

ISSN :
1936086X and 19360851
Volume :
10
Database :
OpenAIRE
Journal :
ACS Nano
Accession number :
edsair.doi.dedup.....06fdb46839004d868a8dd4b8d6174ef7
Full Text :
https://doi.org/10.1021/acsnano.6b04609