Back to Search
Start Over
Electronic states and intraband terahertz optical transitions in InGaAs quantum rods
- Source :
- Journal of Applied Physics, ICT FP7 Publications Database, OpenAIRE
- Publication Year :
- 2012
- Publisher :
- AMER INST PHYSICS, 2012.
-
Abstract
- Strain-dependent eight-band k·p method is used to analyze the electronic structure and intraband optical transitions in self-assembled InGaAs quantum rods in the terahertz range. The calculation of absorption spectra for the growth- and in-plane-polarized radiation shows some similarities to those of quantum well and single quantum dot structures, augmented with contribution from transitions between the dot and quantum well states. The influence of rod height on the electronic structure and the intraband absorption spectra is also investigated. It is found that the energy of maximal terahertz absorption can be tailored by the rod height for both in-plane and in-growth polarized radiation.
- Subjects :
- Materials science
Condensed matter physics
Absorption spectroscopy
Condensed Matter::Other
Terahertz radiation
General Physics and Astronomy
02 engineering and technology
Electronic structure
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
01 natural sciences
Terahertz spectroscopy and technology
Effective mass (solid-state physics)
Quantum dot
Quantum dot laser
0103 physical sciences
010306 general physics
0210 nano-technology
Quantum well
Subjects
Details
- ISSN :
- 00218979
- Issue :
- 00218979
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....04a5ae339ed7665e01bd90a191b17afa
- Full Text :
- https://doi.org/10.1063/1.3692069