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Reducing metal/graphene contact resistance via N, N-dimethylacetamide-assisted clean fabrication process
- Source :
- Nanotechnology. 32(31)
- Publication Year :
- 2021
-
Abstract
- Contact resistance (R C ) is of great importance for radio frequency (RF) applications of graphene, especially graphene field effect transistors (FETs) with short channel. FETs and transmission line model test structures based on chemical vapor deposition grown graphene are fabricated. The effects of employing traditional lithography solvent (Acetone) and strong solvents for photo resist, such as N, N-Dimethylacetamide (ZDMAC) and N-Methyl pyrrolidone (NMP), are systematically investigated. It was found that ZDMAC and NMP have more proficiency than acetone to remove the photo-resist residues and contaminations attached on graphene surface, enabling clean surface of graphene. However, strong solvents are found to destroy the lattice structure of graphene channel and induce defects in graphene lattice. Clean surface contributes to a significant reduction in the R C between graphene channel and metal electrode, and the defects introduced on graphene surface underneath metal electrodes also contribute the reduction of R C . But defects and deformation of lattice will increase the resistance in graphene channel and lead to the compromise of device performance. To address this problem, a mix wet-chemical approach employing both acetone and ZDMAC was developed in our study to realize a 19.07% reduction of R C , without an unacceptable mass production of defects.
- Subjects :
- Fabrication
Materials science
Bioengineering
02 engineering and technology
Crystal structure
Chemical vapor deposition
Photoresist
010402 general chemistry
01 natural sciences
law.invention
Metal
law
General Materials Science
Electrical and Electronic Engineering
Lithography
Graphene
business.industry
Mechanical Engineering
Contact resistance
General Chemistry
021001 nanoscience & nanotechnology
0104 chemical sciences
Mechanics of Materials
visual_art
visual_art.visual_art_medium
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 13616528
- Volume :
- 32
- Issue :
- 31
- Database :
- OpenAIRE
- Journal :
- Nanotechnology
- Accession number :
- edsair.doi.dedup.....039bb475ce90500493f2dde6b1d8bfe5