Characteristics of Silicon Nanocrystals Embedded in the Amorphous-Silicon Carbide Films Deposited by Cat-CVD at Low Temperature for Optoelectronics Applications

Si/SiC composite films, namely, Si nanocrystals in a-SiC matrix material, were deposited by using Cat-CVD. Photoluminescence characteristics of a-SiC thin films prepared with various gas ratio R=[CH4]/[SiH4] were investigated. Fourier-transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) measurements composition ratio of a-SiC films. It shows different composition ratio between R > 10 and R < 10. Photoluminescence (PL) intensity was changed before and after thermal annealing at various temperatures. The PL intensity was increased after annealing peak position was shift short wavelength range.