Ion-beam synthesis of InAs nanocrystals in crystalline silicon

The formation of nanodimensional InAs crystallites on Si wafers was studied by the method of high fluence implantation of As and In ions with subsequent high temperature treatment. It was found that the size and depth distributions of the crystallites depend on both the implantation temperature and the annealing conditions. A broad band in an energy range of 0.75–1.1 eV was recorded in the photolumines cence spectra of the samples.