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GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics
- Source :
- Optics letters. 46(4)
- Publication Year :
- 2021
-
Abstract
- In this Letter, we demonstrate mid-infrared (MIR) lateral p − i − n GeSn waveguide photodetectors (WGPDs) on silicon, to the best of our knowledge for the first time, as a key enabler of MIR electronic–photonic integrated circuits (EPICs). Narrow-bandgap GeSn alloys were employed as the active material to enable efficient photodetection in the MIR region. A lateral p − i − n homojunction diode was designed and fabricated to significantly enhance the optical confinement factor of the guided modes and thus enhance the optical responsivity. Thus, a photodetection range of up to 1950 nm and a good responsivity of 0.292 A/W at 1800 nm were achieved. These results demonstrate the feasibility of planar GeSn WGPDs for monolithic MIR EPICs on silicon.
- Subjects :
- Materials science
business.industry
Photodetector
02 engineering and technology
Photodetection
Integrated circuit
021001 nanoscience & nanotechnology
01 natural sciences
Waveguide (optics)
Atomic and Molecular Physics, and Optics
law.invention
010309 optics
Responsivity
Optics
law
0103 physical sciences
Photonics
Homojunction
0210 nano-technology
business
Diode
Subjects
Details
- ISSN :
- 15394794
- Volume :
- 46
- Issue :
- 4
- Database :
- OpenAIRE
- Journal :
- Optics letters
- Accession number :
- edsair.doi.dedup.....026bad573edf9a889b817e6de5f34269