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GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics

Authors :
Guo-En Chang
Cheng-Hsun Tsai
Kuan-Chih Lin
H. H. Cheng
Kuo-Chih Lee
Chin-Yuan Cheng
Source :
Optics letters. 46(4)
Publication Year :
2021

Abstract

In this Letter, we demonstrate mid-infrared (MIR) lateral p − i − n GeSn waveguide photodetectors (WGPDs) on silicon, to the best of our knowledge for the first time, as a key enabler of MIR electronic–photonic integrated circuits (EPICs). Narrow-bandgap GeSn alloys were employed as the active material to enable efficient photodetection in the MIR region. A lateral p − i − n homojunction diode was designed and fabricated to significantly enhance the optical confinement factor of the guided modes and thus enhance the optical responsivity. Thus, a photodetection range of up to 1950 nm and a good responsivity of 0.292 A/W at 1800 nm were achieved. These results demonstrate the feasibility of planar GeSn WGPDs for monolithic MIR EPICs on silicon.

Details

ISSN :
15394794
Volume :
46
Issue :
4
Database :
OpenAIRE
Journal :
Optics letters
Accession number :
edsair.doi.dedup.....026bad573edf9a889b817e6de5f34269