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In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy
- Source :
- Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2012, 100, pp.212107. ⟨10.1063/1.4721521⟩, Applied Physics Letters, 2012, 100, pp.212107. ⟨10.1063/1.4721521⟩
- Publication Year :
- 2012
- Publisher :
- HAL CCSD, 2012.
-
Abstract
- International audience; Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy is studied through a combination of two in situ tools: grazing incidence x-ray diffraction and reflection high energy electron diffraction. Growth on bare Si(111) and on AlN/Si(111) is compared. A significantly larger delay at nucleation is observed for nanowires grown on bare Si(111). The difference in the nucleation delay is correlated to a dissimilarity of chemical reactivity between Al and Ga with nitrided Si(111).
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
Silicon
business.industry
Nanowire
Nucleation
chemistry.chemical_element
Crystal growth
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Crystallography
Nanolithography
chemistry
Electron diffraction
0103 physical sciences
X-ray crystallography
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Optoelectronics
0210 nano-technology
business
Molecular beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2012, 100, pp.212107. ⟨10.1063/1.4721521⟩, Applied Physics Letters, 2012, 100, pp.212107. ⟨10.1063/1.4721521⟩
- Accession number :
- edsair.doi.dedup.....026b32992011672250047558a35947aa
- Full Text :
- https://doi.org/10.1063/1.4721521⟩