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An affordable method to produce CuInS2 'mechano-targets' for film deposition

Authors :
Massimo Mazzer
Giulia Spaggiari
F. Pattini
Edmondo Gilioli
Davide Calestani
Lara Righi
Francesco Mezzadri
Riccardo Manfredi
Davide Delmonte
S. Rampino
Source :
Semiconductor science and technology, 35 (2020): 045026-1. doi:10.1088/1361-6641/ab760e, info:cnr-pdr/source/autori:Delmonte, D.; Manfredi, R.; Calestani, D.; Mezzadri, F.; Righi, L.; Mazzer, M.; Pattini, F.; Rampino, S.; Spaggiari, G.; Gilioli, E./titolo:An affordable method to produce CuInS2<%2Finf> 'mechano-targets' for film deposition/doi:10.1088%2F1361-6641%2Fab760e/rivista:Semiconductor science and technology (Print)/anno:2020/pagina_da:045026-1/pagina_a:/intervallo_pagine:045026-1/volume:35
Publication Year :
2020
Publisher :
Institute of Physics, London , Regno Unito, 2020.

Abstract

We report on the room temperature, simple and cheap preparation by mechano-synthesis of polycrystalline targets of complex sulphide semiconductors, namely CuInS (CIS), to be used for film deposition in physical vacuum techniques such as PLD, sputtering or LT-PED. The sulphur (S)-based targets usually require expensive high pressure equipment to compensate the high S vapour pressure; nevertheless they are indispensable for the deposition of high band-gap semiconductor materials. The comparison of CIS films grown by mechano-synthesis and by commercial targets demonstrates similar material quality, making the mechano-synthesis a viable solution in the fabrication of high band-gap, S-based targets of complex chalcogenides.

Details

Language :
English
Database :
OpenAIRE
Journal :
Semiconductor science and technology, 35 (2020): 045026-1. doi:10.1088/1361-6641/ab760e, info:cnr-pdr/source/autori:Delmonte, D.; Manfredi, R.; Calestani, D.; Mezzadri, F.; Righi, L.; Mazzer, M.; Pattini, F.; Rampino, S.; Spaggiari, G.; Gilioli, E./titolo:An affordable method to produce CuInS2<%2Finf> &#39;mechano-targets&#39; for film deposition/doi:10.1088%2F1361-6641%2Fab760e/rivista:Semiconductor science and technology (Print)/anno:2020/pagina_da:045026-1/pagina_a:/intervallo_pagine:045026-1/volume:35
Accession number :
edsair.doi.dedup.....024f2f4e1ed15b33c6d2bb691ace1c34
Full Text :
https://doi.org/10.1088/1361-6641/ab760e