Optical absorption and birefringence in GaAs/AlAs MQW structures due to intersubband electron transitions

Authors :: Leonid E. Vorobjev
I. E. Titkov
V.M. Ustinov
Vadim A. Shalygin
Aleksandr A Andronov
A.R. Kovsh
D. A. Firsov
V. Ya. Aleshkin
S. N. Danilov
A.E. Zhukov
Boris A. Andreev
E. V. Demidov
Source :: Scopus-Elsevier
Abstract: Optical absorption and birefringence due to intersubband electron transitions were investigated in GaAs/AlAs MQW structures. These structures are intended for creation of a mid-infrared laser of a new type. Experimental results on electron redistribution between size-quantization levels under electron heating were obtained up to an electric field of 3500?V?cm-1.

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