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Formation of Silicene Nanosheets on Graphite
- Source :
- ACS Nano
- Publication Year :
- 2016
- Publisher :
- American Chemical Society, 2016.
-
Abstract
- The extraordinary properties of graphene have spurred huge interest in the experimental realization of a two-dimensional honeycomb lattice of silicon, namely, silicene. However, its synthesis on supporting substrates remains a challenging issue. Recently, strong doubts against the possibility of synthesizing silicene on metallic substrates have been brought forward because of the non-negligible interaction between silicon and metal atoms. To solve the growth problems, we directly deposited silicon on a chemically inert graphite substrate at room temperature. Based on atomic force microscopy, scanning tunneling microscopy, and ab initio molecular dynamics simulations, we reveal the growth of silicon nanosheets where the substrate-silicon interaction is minimized. Scanning tunneling microscopy measurements clearly display the atomically resolved unit cell and the small buckling of the silicene honeycomb structure. Similar to the carbon atoms in graphene, each of the silicon atoms has three nearest and six second nearest neighbors, thus demonstrating its dominant sp
- Subjects :
- Materials science
Silicon
General Physics and Astronomy
chemistry.chemical_element
silicon growth
Nanotechnology
02 engineering and technology
01 natural sciences
law.invention
Settore FIS/03 - Fisica della Materia
Metal
law
2D nanomaterials
0103 physical sciences
General Materials Science
Graphite
010306 general physics
density functional theory
Silicene
Graphene
ab initio molecular dynamics simulations
General Engineering
021001 nanoscience & nanotechnology
electronic density of states measurement and calculations
scanning tunneling microscopy
silicene
Honeycomb structure
chemistry
visual_art
visual_art.visual_art_medium
Density functional theory
Scanning tunneling microscope
0210 nano-technology
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- ACS Nano
- Accession number :
- edsair.doi.dedup.....0106b56b0789d57e82d9ddfdc10ac98b