Excitonic lifetime for double-barrier heterostructures in the presence of phonons

In this work, we have numerically integrated in space and time the effective-mass Schr\"odinger equation for an electron-hole pair in a GaAs/AlAs double-barrier heterostructure. Considering the electron-phonon interaction and an external electric field, we have studied the excitonic tunneling escape process from the double-barrier quantum well. In this way, electronic lifetimes have been obtained at different well widths and applied electric fields.