Back to Search
Start Over
Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells
- Source :
- International Journal of Photoenergy, Vol 2015 (2015)
- Publication Year :
- 2015
- Publisher :
- Hindawi Publishing Corporation, 2015.
-
Abstract
- Cu2ZnSnS4(CZTS) absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21 eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075 eV and 0.85 eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, Ga)Se2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS.
- Subjects :
- Cu2ZnSnS4, CdS, Point defects passivation, Photoluminescence
Materials science
Photoluminescence
Passivation
Article Subject
Renewable Energy, Sustainability and the Environment
business.industry
Band gap
lcsh:TJ807-830
lcsh:Renewable energy sources
General Chemistry
Crystallographic defect
Atomic and Molecular Physics, and Optics
CHIM/02 - CHIMICA FISICA
chemistry.chemical_compound
FIS/01 - FISICA SPERIMENTALE
chemistry
Sputtering
Optoelectronics
General Materials Science
CZTS
business
Excitation
Chemical bath deposition
Subjects
Details
- Language :
- English
- ISSN :
- 1110662X
- Database :
- OpenAIRE
- Journal :
- International Journal of Photoenergy
- Accession number :
- edsair.doi.dedup.....006b52e0d651aed01d112bee7ffd6fde
- Full Text :
- https://doi.org/10.1155/2015/583058