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S-TAT Leakage Current in Partial Isolation Type Saddle-FinFET (Pi-FinFET)s
- Source :
- IEEE Access, Vol 9, Pp 111567-111575 (2021)
- Publication Year :
- 2021
- Publisher :
- IEEE, 2021.
-
Abstract
- In this paper, we compare conventional saddle type FinFETs to partial isolation type saddle FinFETs (Pi-FinFETs) using 3D TCAD simulations to examine the effect of single charge traps for proper prediction of leakage current. We simulated single charge traps at various locations in the drain region, and analyzed how the traps affect leakage current. Our results show that Pi-FinFETs enhanced the leakage current characteristics given the presence of a single charge trap. Also, it was found that Pi-FinFETs exhibit half the $\text{F}_{\mathrm {TAT}}$ of S-FinFETs. Based on the results from our analysis method, where we use $\text{I}_{\mathrm {off}}$ fluctuation, the $\text{F}_{\mathrm {TAT}}$ , the $\sigma _{\mathrm {F}}$ and the $\text{P}_{\mathrm {F}}$ parameters to accurately compare performance, and present device design guidelines aimed at improving DRAM refresh characteristics.
- Subjects :
- Physics
General Computer Science
Condensed matter physics
band-to-band tunneling (BTBT)
General Engineering
Charge (physics)
on current (Ion)
Type (model theory)
Computer Science::Digital Libraries
TK1-9971
Partial isolation type FinFET (Pi-FinFET)
TheoryofComputation_MATHEMATICALLOGICANDFORMALLANGUAGES
potential drop width (PDW)
ComputingMethodologies_SYMBOLICANDALGEBRAICMANIPULATION
Pi
ComputingMethodologies_DOCUMENTANDTEXTPROCESSING
Computer Science::Programming Languages
General Materials Science
Computer Science::Symbolic Computation
Electrical engineering. Electronics. Nuclear engineering
gate-induced drain leakage (GIDL)
Analysis method
Saddle
trap-assisted tunneling (TAT)
Subjects
Details
- Language :
- English
- ISSN :
- 21693536
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- IEEE Access
- Accession number :
- edsair.doi.dedup.....0065ee3034e856a171a46bc972c37532