Improvement of spatial homogeneity of the ZnGeP2 single crystal grown by the Bridgman method in a vertical geometry

Spatial inhomogeneity of the ZnGeP2 single crystal grown in the new installation that allows thermal conditions in the working volume and pressure of the vapor phase to be changed and forced convection in the melt to be created is investigated. It is demonstrated that continuous correction of the crystallization temperature regime allows the crystal growth rate to be stabilized and its deviation from the nominal velocity of growth container motion to be decreased thereby decreasing the spatial inhomogeneity of the growing crystal.