A monolithically integrated Si interband tunneling diode (IBTD)/MOSFET memory for ultra low voltage operation below 0.5 V

MLA

Haruyuki Sorada, et al. “A Monolithically Integrated Si Interband Tunneling Diode (IBTD)/MOSFET Memory for Ultra Low Voltage Operation below 0.5 V.” Superlattices and Microstructures, vol. 28, Nov. 2000, pp. 331–37. EBSCOhost, https://doi.org/10.1006/spmi.2000.0930.

APA

Haruyuki Sorada, T. Uenoyama, Shigeo Yoshii, K. Ohnaka, Kiyoshi Morimoto, & K. Morita. (2000). A monolithically integrated Si interband tunneling diode (IBTD)/MOSFET memory for ultra low voltage operation below 0.5 V. Superlattices and Microstructures, 28, 331–337. https://doi.org/10.1006/spmi.2000.0930

Chicago

Haruyuki Sorada, T. Uenoyama, Shigeo Yoshii, K. Ohnaka, Kiyoshi Morimoto, and K. Morita. 2000. “A Monolithically Integrated Si Interband Tunneling Diode (IBTD)/MOSFET Memory for Ultra Low Voltage Operation below 0.5 V.” Superlattices and Microstructures 28 (November): 331–37. doi:10.1006/spmi.2000.0930.