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Fluorescence spectrometry of N-doped ZnO films
- Source :
- 2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications.
- Publication Year :
- 2009
- Publisher :
- SPIE, 2009.
-
Abstract
- The different N-doped ZnO thin films were grown by RF magnetron sputtering on the glass substrates by changing the ratio of O2 to N2.The XRD and photoluminescence (PL) spectra were measured. The results show that the intensity and positions of these PL peaks are changed with nitrogen content. There are two peaks at 374nm and 391nm under fluorescence spectrum when the ratio of Ar:O2:N2 is 15:7:8. The fluorescence peak located at 374nm has the characteristic of p-type ZnO films.© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Details
- ISSN :
- 0277786X
- Database :
- OpenAIRE
- Journal :
- 2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications
- Accession number :
- edsair.doi...........ff456edb8c2730aa467a518400fdb603
- Full Text :
- https://doi.org/10.1117/12.838181