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Fluorescence spectrometry of N-doped ZnO films

Authors :
H. Q. Li
H. X. Shen
X. X. He
Source :
2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications.
Publication Year :
2009
Publisher :
SPIE, 2009.

Abstract

The different N-doped ZnO thin films were grown by RF magnetron sputtering on the glass substrates by changing the ratio of O2 to N2.The XRD and photoluminescence (PL) spectra were measured. The results show that the intensity and positions of these PL peaks are changed with nitrogen content. There are two peaks at 374nm and 391nm under fluorescence spectrum when the ratio of Ar:O2:N2 is 15:7:8. The fluorescence peak located at 374nm has the characteristic of p-type ZnO films.© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Details

ISSN :
0277786X
Database :
OpenAIRE
Journal :
2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications
Accession number :
edsair.doi...........ff456edb8c2730aa467a518400fdb603
Full Text :
https://doi.org/10.1117/12.838181