Defect-mediated polarization switching in ferroelectric films for low-power-consuming and ultra-high-density memories

Ferroelectric poly(vinylidene fluoride) (PVDF) based polymers are attracting tremendous interest because of their potential applications in flexible non-volatile memories. Current research suggests that the existence of a large hysteresis loop results in high-voltage operation and low writing/erasing speed, which is originated from uniform chain packing and coherent ferroelectric sequences in the crystalline regions. Here, we demonstrate the novel approach to understand the defect-mediated switching mechanisms in ferroelectric polymers by PFM-probe based technology. The single-point and linear polarization reversal is well controlled by defect-mediated ferroelectric phases that determine activation energy, switching rate, and the thermal stability. By the regulation of VDF/TrFE ratio and varying processing conditions, the coherent ferroelectric phase with all-trans sequence in the P(VDF-TrFE) has been disrupted by defects. Specially, the crystallites formed at high temperature in the copolymer P(VDF-TrFE) 50:50 mol% exhibit less ordered ferroelectric crystalline sequences, thus attaining the excellent features of the low operation voltage of about 4 V with a switching time of 100 ms, ultra-high memory density of 43.9 Gbit∙in−2 (by a 7 V, 1 ms pulse) and a high usage temperature of 60 °C. Compared with P(VDF-TrFE) 68:32 mol%, normal ferroelectric, it saves approximate 50% ratio of energy cost, and realizes four times higher resolution. Understanding and controlling defect functionality in ferroelectric materials is as critical for realizing their reliable applications in ferroelectric memories.