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Radiation defects in n-4H-SiC irradiated with 8-MeV protons
- Source :
- Semiconductors. 34:1016-1020
- Publication Year :
- 2000
- Publisher :
- Pleiades Publishing Ltd, 2000.
-
Abstract
- Capacitance-related methods and electron spin resonance were used to study the deep-level centers formed in n-4H-SiC as a result of irradiation with 8-MeV protons. For the samples, Schottky diodes and p-n structures formed on the layers either obtained by sublimational epitaxy or produced commercially by CREE Inc. (United States) were used. It was found that the type of centers introduced by irradiation is independent of the technology of the material growth and the type of charged particles. On the basis of the results of annealing the defects and the data of electron spin resonance, the possible structure of the centers is suggested.
- Subjects :
- Materials science
Annealing (metallurgy)
Schottky diode
Radiation
Condensed Matter Physics
Epitaxy
Molecular physics
Atomic and Molecular Physics, and Optics
Charged particle
Electronic, Optical and Magnetic Materials
law.invention
Material growth
law
Irradiation
Electron paramagnetic resonance
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 34
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........ff0dd95f3d644ebfe6bd18a8884db2fd
- Full Text :
- https://doi.org/10.1134/1.1309411