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Radiation defects in n-4H-SiC irradiated with 8-MeV protons

Authors :
Anatoly M. Strel'chuk
V. V. Kozlovskii
Denis Davydov
A. I. Veinger
A. A. Lebedev
N.S. Savkina
Source :
Semiconductors. 34:1016-1020
Publication Year :
2000
Publisher :
Pleiades Publishing Ltd, 2000.

Abstract

Capacitance-related methods and electron spin resonance were used to study the deep-level centers formed in n-4H-SiC as a result of irradiation with 8-MeV protons. For the samples, Schottky diodes and p-n structures formed on the layers either obtained by sublimational epitaxy or produced commercially by CREE Inc. (United States) were used. It was found that the type of centers introduced by irradiation is independent of the technology of the material growth and the type of charged particles. On the basis of the results of annealing the defects and the data of electron spin resonance, the possible structure of the centers is suggested.

Details

ISSN :
10906479 and 10637826
Volume :
34
Database :
OpenAIRE
Journal :
Semiconductors
Accession number :
edsair.doi...........ff0dd95f3d644ebfe6bd18a8884db2fd
Full Text :
https://doi.org/10.1134/1.1309411