SU-GG-T-303: Evaluation of An Implantable MOSFET Dosimeter for Use with Hypo-Fractionated External Beam Treatments

Purpose: Evaluate the performance of an implantable MOSFETdosimeter designed for hypo‐fractionated protocols. Method and Materials: The DVS® implantable dosimeter has been developed for use with external beam radiotherapy. A new version is currently under development for use with hypo‐fractionated protocols (DVS‐HFT*). This dosimeter is pre‐calibrated for use at body temperature in a dose per fraction range of 340–1200 cGy. The dosimeter response was evaluated in a water phantom at 37°C to validate the accuracy as a function of dose. Since delivery times for high dose fractions can vary, a study of the response as a function of treatment time was performed. In addition, dose rate dependency for high doses was evaluated. Final dosimeter accuracy was validated by delivering simulated hypo‐fractionated treatments on a body phantom at 37 °C. Two dosimeters each (total six) were irradiated inside the phantom with a breast BID plan at 340 cGy per fraction (10 fx), two prostate IMRT plans at 700 cGy per fraction (5 fx) using 6 MV and 18 MV. Results: The dosimeter had minimum dependency on dose fraction size from 340 to 1200 cGy. Phantom testing found a response accuracy of