Threshold and spectral characteristics of quantum dot lasers fabricated by selective area epitaxy

Authors :: James J. Coleman
Victor C. Elarde
Source :: (CLEO). Conference on Lasers and Electro-Optics, 2005..
Publication Year :: 2005
Publisher :: IEEE, 2005.
Abstract: The threshold and spectral characteristics of patterned quantum dot lasers fabricated by selective area MOCVD crystal growth are presented Full three-dimensional confinement of carriers in an engineered quantum structure is demonstrated.

Subjects :: Materials science
business.industry
Physics::Optics
Chemical vapor deposition
Semiconductor laser theory
Optics
Semiconductor
Selective area epitaxy
Quantum dot laser
Optoelectronics
Metalorganic vapour phase epitaxy
business
Quantum well
Tunable laser

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