Accurate modeling of capacitive, resistive and inductive effects of interconnect

Besides reviewing the numerical techniques in computing resistance, inductance, and capacitance, this paper addresses the challenges to accurately model the deep-submicron on-chip interconnects. Deriving regression equations from numerous runs of Poisson field solvers, one can easily transfer the accuracy of physical simulation to the rule-based full-chip layout parasitic extractors. Such methodology, which was implemented in the program Raphael, can be extended to the PCB and other package applications, and help create rules for place-and-route.