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Growth Kinetics of Silicon Carbide Chemical Vapor Deposition from Methyltrichlorosilane
- Source :
- Japanese Journal of Applied Physics. 38:2089
- Publication Year :
- 1999
- Publisher :
- IOP Publishing, 1999.
-
Abstract
- The epitaxial chemical vapor deposition of SiC on (100) and (111) Si substrates has been conducted in a cold wall furnace from methyltrichlorosilane (MTS) as the single source material. In the temperature range from 1100°C to 1350°C, both surface-reaction-limited growth and diffusion-limited growth have been observed. The activation energy for growth was decreased using a two-step process route in which an intermediate layer was deposited by controlling only the partial pressure of the MTS.
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 38
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........fe178f5b8a58f680b5f9c9e9594f3006