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High-Quality and Strain-Relaxation GaN Epilayer Grown on SiC Substrates Using AlN Buffer and AlGaN Interlayer
- Source :
- Chinese Physics Letters. 34:048101
- Publication Year :
- 2017
- Publisher :
- IOP Publishing, 2017.
-
Abstract
- We study the effect of the AlGaN interlayer on structural quality and strain engineering of the GaN films grown on SiC substrates with an AlN buffer layer. Improved structural quality and tensile stress releasing are realized in unintentionally doped GaN thin films grown on 6H–SiC substrates by metal organic chemical vapor deposition. Using the optimized AlGaN interlayer, we find that the full width at half maximum of x-ray diffraction peaks for GaN decreases dramatically, indicating an improved crystalline quality. Meanwhile, it is revealed that the biaxial tensile stress in the GaN film is significantly reduced from the Raman results. Photoluminescence spectra exhibit a shift of the peak position of the near-band-edge emission, as well as the integrated intensity ratio variation of the near-band-edge emission to the yellow luminescence band. Thus by optimizing the AlGaN interlayer, we could acquire the high-quality and strain-relaxation GaN epilayer with large thickness on SiC substrates.
- Subjects :
- 010302 applied physics
Photoluminescence
Materials science
business.industry
Doping
General Physics and Astronomy
02 engineering and technology
Chemical vapor deposition
021001 nanoscience & nanotechnology
01 natural sciences
symbols.namesake
Full width at half maximum
Strain engineering
0103 physical sciences
symbols
Optoelectronics
Thin film
0210 nano-technology
Raman spectroscopy
business
Luminescence
Subjects
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 34
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........fe1475efd07d8bb1090128cfdeff7b1e