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A New Methodology to Analyze Carrier Transport Properties for In x Ga1−x As Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation
- Source :
- IEEE Electron Device Letters. 44:229-232
- Publication Year :
- 2023
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2023.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 44
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........fdd1615ca7d232edd0c820da12f5e8c2