Back to Search Start Over

Doping Ferroelectric Hafnium Oxide by in-Situ Precursor Mixing

Authors :
Wenke Weinreich
Kati Kühnel
Maciej Wiatr
C. Mart
Thomas Kampfe
Sabine Kolodinski
Malte Czernohorsky
Source :
ACS Applied Electronic Materials. 1:2612-2618
Publication Year :
2019
Publisher :
American Chemical Society (ACS), 2019.

Abstract

We employ a modified atomic layer deposition process utilizing in-situ mixing of precursors to obtain doped hafnium oxide thin films with improved ferroelectric properties. The method is demonstrat...

Subjects

Subjects :
inorganic chemicals
In situ
Materials science
Doping
Ferroelectricity
Electronic, Optical and Magnetic Materials
Hafnium oxide
Atomic layer deposition
Chemical engineering
Scientific method
Materials Chemistry
Electrochemistry
Thin film
Mixing (physics)

Details

ISSN :
26376113
Volume :
1
Database :
OpenAIRE
Journal :
ACS Applied Electronic Materials
Accession number :
edsair.doi...........fdc9e50701345fb1878197697e51440e
Full Text :
https://doi.org/10.1021/acsaelm.9b00591
Full Text Access
View/download PDF

Tools

Authors Abstract Subjects Details