Back to Search
Start Over
Improved Performance of Gate Dielectric Engineered Single-Layer MoS2 Field Effect Transistor
- Source :
- Materials Focus. 7:217-222
- Publication Year :
- 2018
- Publisher :
- American Scientific Publishers, 2018.
Details
- ISSN :
- 2169429X
- Volume :
- 7
- Database :
- OpenAIRE
- Journal :
- Materials Focus
- Accession number :
- edsair.doi...........fdc53c62ac40b8da0352fdc26754c11d