On-Chip Inductor for Millimeter-wave Regime

We discuss transmission line inductor, single coil inductor, 2.5-turn inductor and multi-layer inductor, which can be used in millimeter-wave circuits. We present a multi-layer inductor implemented in 0.13 μm one-poly and seven-metal (1P7M) BiCMOS SiGe process and propose a modified double-π model for on-chip multi-layer inductor. Self-resonance frequency (SRF) beyond 100 GHz were obtained based on the measurement results, demonstrating that the multi-layer inductor can be used for millimeter-wave applications with compact size and high inductance density.