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Simplified Dynamic Model of High-Power Field-Effect Transistors for Studying Switch Modes of Radio Frequency Devices

Authors :
V. Filin
A. Ganbayev
Source :
Proceedings of Telecommunication Universities. 5:66-75
Publication Year :
2019
Publisher :
Bonch-Bruevich State University of Telecommunications, 2019.

Subjects

Subjects :
Physics
law
business.industry
Transistor
Electrical engineering
Radio frequency
business
law.invention

Details

ISSN :
1813324X
Volume :
5
Database :
OpenAIRE
Journal :
Proceedings of Telecommunication Universities
Accession number :
edsair.doi...........fca7a00f1f9d0cef1b7b569df6ba4095

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