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Stabilization of Epitaxial α-Fe2O3 Thin Films Grown by Pulsed Laser Deposition on Oxide Substrates
- Source :
- The Journal of Physical Chemistry C. 122:16042-16047
- Publication Year :
- 2018
- Publisher :
- American Chemical Society (ACS), 2018.
-
Abstract
- We have grown epitaxial incommensurate α-Fe2O3 thin films on α-Al2O3(0001), SrTiO3(111), and LaAlO3(001) substrates, identifying hematite as single iron oxide phase stabilized. We demonstrate that a different lattice coupling behavior as a function of the selected oxide substrate mediates the epitaxial character. Single-oriented α-Fe2O3(0001) layers are obtained on α-Al2O3(0001) and SrTiO3(111) substrates, whereas on the LaAlO3(001) substrate, the hematite layer is found to grow along the r-plane to adapt its hexagonal lattice on the cubic lattice of the substrate, evidencing a single-oriented (1102) layer. In the film plane, crystallographic axes of α-Fe2O3(0001) are collinear with the α-Al2O3(0001) ones, while a rotation of 30° is found between those of α-Fe2O3(0001) and SrTiO3(111). On LaAlO3(001), α-Fe2O3(1102) adopts an in-plane orthorhombic structure rotated 45° respect to the substrate lattice. The crystallographic domain size and the crystalline order are dependent on the incommensurate lattice ...
- Subjects :
- Materials science
Film plane
Oxide
02 engineering and technology
Hematite
010402 general chemistry
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
0104 chemical sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Pulsed laser deposition
chemistry.chemical_compound
Crystallography
General Energy
chemistry
visual_art
visual_art.visual_art_medium
Hexagonal lattice
Orthorhombic crystal system
Physical and Theoretical Chemistry
Thin film
0210 nano-technology
Subjects
Details
- ISSN :
- 19327455 and 19327447
- Volume :
- 122
- Database :
- OpenAIRE
- Journal :
- The Journal of Physical Chemistry C
- Accession number :
- edsair.doi...........fca007d23950528b683b7613d5f98548
- Full Text :
- https://doi.org/10.1021/acs.jpcc.8b02430