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Study on interface dipole layer strength change by temperature in high-k/SiO2 and high-k/high-k systems and its possible origin

Authors :
K. Kita
T. Hamaguchi
S. Nittayakasetwat
Source :
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Publication Year :
2018
Publisher :
The Japan Society of Applied Physics, 2018.

Subjects

Subjects :
Dipole
Materials science
Condensed matter physics
Interface (Java)
Layer (electronics)
High-κ dielectric

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........fc4ea1ca2aab43db7f10d026c4a4e41b
Full Text :
https://doi.org/10.7567/ssdm.2018.b-5-01
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