Nondestructive measurements of stoichiometry in undoped semi‐insulating gallium arsenide by x‐ray bond method

The influences of microdefects and dislocations on the lattice parameters of undoped semi‐insulating GaAs single crystals were analyzed, and a novel nondestructive method for measuring stoichiometry in undoped semi‐insulating GaAs was established in this letter. The comparison of this method with coulometric titration indicates that the method of nondestructive measurements is indeed convenient and reliable.