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High-mobility ZnVxOy/ZnO conduction path in ZnO/V/ZnO multilayer structure

Authors :
Bao Jhen Li
Y. S. Wei
Wei Hao Chen
Ching Han Liao
C. Cheng
Chia Yuen Chou
Cheng Yi Liu
Source :
Journal of Applied Physics. 130:075302
Publication Year :
2021
Publisher :
AIP Publishing, 2021.

Abstract

In this study, a 300 °C-annealed 3 × 4 V/ZnO multilayer structure demonstrates the lowest resistivity (3.82 × 10−3 Ω cm) and the highest mobility (18 cm2/V s) among the studied V/ZnO multilayer structures. By measuring the energy bandgap (Eg), work function (Φ), and electron affinity (χ) by ultraviolet photoelectron spectroscopy and photoluminescence analysis, the corresponding energy band diagram at the ZnVxOy/ZnO interface can be constructed. A potential is observed at the ZnVxOy/ZnO interface, which induces the two-dimensional electron gas (2DEG) effect, and this is attributed to the high-mobility conduction path. The potential well directly relates to the Φ difference between the ZnO and ZnVxOy layers, which is determined to be 0.22, 0.46, and −0.1 eV for the as-deposited, 300 °C-annealed, and 500 °C-annealed V/ZnO multilayer structures, respectively. The 300 °C-annealed V/ZnO multilayer structure could possibly have the largest depth in the potential well. This supports the 2DEG mechanism for the high mobility of the 300 °C-annealed V/ZnO multilayer structure.

Details

ISSN :
10897550 and 00218979
Volume :
130
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........fc0d5f7d34a33e8932a0202cecba3c0a
Full Text :
https://doi.org/10.1063/5.0053360