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Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate
- Source :
- Journal of Electronic Materials. 47:1071-1079
- Publication Year :
- 2017
- Publisher :
- Springer Science and Business Media LLC, 2017.
-
Abstract
- High-density (∼ 80/um2) vertical InAs nanowires (NWs) with small diameters (∼ 28 nm) were grown on bare Si (111) substrates by means of two-step metal organic chemical vapor deposition. There are two critical factors in the growth process: (1) a critical nucleation temperature for a specific In molar fraction (approximately 1.69 × 10−5 atm) is the key factor to reduce the size of the nuclei and hence the diameter of the InAs NWs, and (2) a critical V/III ratio during the 2nd step growth will greatly increase the density of the InAs NWs (from 45 μm−2 to 80 μm−2) and at the same time keep the diameter small. The high-resolution transmission electron microscopy and selected area diffraction patterns of InAs NWs grown on Si exhibit a Wurtzite structure and no stacking faults. The observed longitudinal optic peaks in the Raman spectra were explained in terms of the small surface charge region width due to the small NW diameter and the increase of the free electron concentration, which was consistent with the TCAD program simulation of small diameter (
- Subjects :
- 010302 applied physics
Materials science
Analytical chemistry
Nanowire
Nucleation
Nanotechnology
02 engineering and technology
Substrate (electronics)
Chemical vapor deposition
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
symbols.namesake
Transmission electron microscopy
0103 physical sciences
Materials Chemistry
symbols
Electrical and Electronic Engineering
Selected area diffraction
0210 nano-technology
Raman spectroscopy
Wurtzite crystal structure
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 47
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........fbdb6a62397f86480ff0409ec7c97722