Surface segregated Ga, In, and Al activation in high Ge content SiGe during UV melt laser induced non-equilibrium solidification

The impact of solidification front velocity (SFV) on dopant segregation and activation surpassing the equilibrium solid solubility limit was investigated in high Ge content SiGe using UV nanosecond melt laser annealing (MLA). We first simulated the SFV evolution in the MLA-induced solidification of a SiGe binary system. It was then combined with the near-surface atomic and electrically active dopant concentrations measured in the Ga, In, and Al-implanted SiGe after MLA. Solute trapping phenomenon and self-compensation effect of the dopants were discussed to capture a part of their segregation and activation dynamics in the presented SiGeX ternary systems.