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Single-ZnO-Nanowire Memory
- Source :
- IEEE Transactions on Electron Devices. 58:1735-1740
- Publication Year :
- 2011
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2011.
-
Abstract
- Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.
- Subjects :
- Materials science
business.industry
Nanowire
Wide-bandgap semiconductor
Nanotechnology
Space charge
Electronic, Optical and Magnetic Materials
Non-volatile memory
Nanoelectronics
Electron diffraction
Transmission electron microscopy
Optoelectronics
Electrical and Electronic Engineering
Selected area diffraction
business
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 58
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........fb6293775f282ca01b34779931eaa65d